GP70R180T2P
Overview
This is a 700V GaN-on-Si enhancement-mode power transistor. The properties of GaN allow for high current, high breakdown voltage and high switching frequency.
- Ultra-low FOM
- Ultra-high switching frequency
- Reverse current capability
- Zero reverse recovery loss
- Monolithic integrated ESD protection
- N-MOS pin-to-pin compatible
- RoHS, Pb-free, REACH-compliant
