GPI65008DF68
Overview
These devices are N-channel 650 V Power GaN HEMTs based on proprietary E-mode GaN on silicon technology. The resulting product has extremely low on state resistance, very low input capacitance and zero reverse recovery charge making it especially suitable for applications which require superior power density, ultra-high switching frequency and outstanding efficiency.
- Ultra-low RDS(on)
- High dv/dt capability
- Extremely low input capacitance
- Zero Qrr
- Outstanding switching performance
- Low Profile
