1N1189R - Silicon Standard Recovery Diode

This page provides the datasheet information for the 1N1189R, a member of the 1N1188 Silicon Standard Recovery Diode family.

Product Overview

GeneSiC

Part number	1N1189R
Manufacturer	GeneSiC
File Size	763.25 KB
Description	Silicon Standard Recovery Diode
Datasheet	1N1189R Datasheet
Additional preview pages of the 1N1189R datasheet.

High Surge Capability.
Types from 400 to 600 V VRRM.
Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1188 thru 1N1190R VRRM = 400 V - 600 V IF = 35 A AC DO-5 Package CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N1188 (R) 1N1189 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocki.

1N1189R - Silicon Standard Recovery Diode (America Semiconductor)
1N1189R - Standard Recovery Diode (Naina Semiconductor)
1N1189 - STANDARD RECOVERY RECTIFIERS (Digitron Semiconductors)
1N1189 - 35/40/and 60 Amp Power Silicon Rectifier Diodes (International Rectifier)
1N1189 - Silicon Standard Recovery Diode (America Semiconductor)
1N1189 - Silicon Power Rectifier (Microsemi)
1N1189 - Standard Recovery Diode (Naina Semiconductor)
1N1189A - STANDARD RECOVERY RECTIFIERS (Digitron Semiconductors)
1N1189A - 35/40/and 60 Amp Power Silicon Rectifier Diodes (International Rectifier)
1N1189A - Silicon Power Rectifier (Microsemi)

Other Datasheets by GeneSiC

Published: Jun 27, 2019 |