G2R1000MT17D Datasheet PDF - GeneSiC Silicon Carbide MOSFET Specs

G2R1000MT17D - Silicon Carbide MOSFET

Datasheet Summary

Features

G2R™ Technology.
Softer RDS(ON) v/s Temperature Dependency.
LoRing™ - Electromagnetically Optimized Design.
Smaller RG(INT) and Lower QG.
Low Device Capacitances (COSS, CRSS).
Superior Cost-Performance Index.
Robust Body Diode with Low VF and Low QRR.
Industry-Leading UIL & Short-Circuit Robustness Advantages.
Compatible with Commercial Gate Drivers.
Low Conduction Losses at all Temperatures.
Redu.

Datasheet Details

Part number	G2R1000MT17D
Manufacturer	GeneSiC
File Size	2.88 MB
Description	Silicon Carbide MOSFET
Datasheet	G2R1000MT17D Datasheet
Additional preview pages of the G2R1000MT17D datasheet.

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Full PDF Text Transcription

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G2R1000MT17D 1700 V 1000 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G2R™ Technology • Softer RDS(ON) v/s Temperature Dependency • LoRing™ - Electromagnetically Optimized Design • Smaller RG(INT) and Lower QG • Low Device Capacitances (COSS, CRSS) • Superior Cost-Performance Index • Robust Body Diode with Low VF and Low QRR • Industry-Leading UIL & Short-Circuit Robustness Advantages • Compatible with Commercial Gate Drivers • Low Conduction Losses at all Temperatures • Reduced Ringing • Faster and More Efficient Switching • Lesser Switching Spikes and Lower Losses • Better Power Density and System Efficiency • Ease of Paralleling without Thermal Runaway • Higher System Reliability TM Package TO-247-3 VDS RDS(ON)(Typ.

Published: Dec 8, 2024 |