G2R1000MT17D
G2R1000MT17D is Silicon Carbide MOSFET manufactured by GeneSiC.
G2R1000MT17D 1700 V 1000 mΩ SiC MOSFET
Silicon Carbide MOSFET
N-Channel Enhancement Mode
Features
- G2R™ Technology
- Softer RDS(ON) v/s Temperature Dependency
- LoRing™
- Electromagnetically Optimized Design
- Smaller RG(INT) and Lower QG
- Low Device Capacitances (COSS, CRSS)
- Superior Cost-Performance Index
- Robust Body Diode with Low VF and Low QRR
- Industry-Leading UIL & Short-Circuit Robustness
Advantages
- patible with mercial Gate Drivers
- Low Conduction Losses at all Temperatures
- Reduced Ringing
- Faster and More Efficient Switching
- Lesser Switching Spikes and Lower Losses
- Better Power Density and System Efficiency
- Ease of Paralleling without Thermal Runaway
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