G2R1000MT17D Overview
G2R1000MT17D 1700 V 1000 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode.
G2R1000MT17D Key Features
- G2R™ Technology
- Softer RDS(ON) v/s Temperature Dependency
- LoRing™
- Electromagnetically Optimized Design
- Smaller RG(INT) and Lower QG
- Low Device Capacitances (COSS, CRSS)
- Superior Cost-Performance Index
- Robust Body Diode with Low VF and Low QRR
- Industry-Leading UIL & Short-Circuit Robustness
- patible with mercial Gate Drivers