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G2R1000MT17D - Silicon Carbide MOSFET

Key Features

  • G2R™ Technology.
  • Softer RDS(ON) v/s Temperature Dependency.
  • LoRing™ - Electromagnetically Optimized Design.
  • Smaller RG(INT) and Lower QG.
  • Low Device Capacitances (COSS, CRSS).
  • Superior Cost-Performance Index.
  • Robust Body Diode with Low VF and Low QRR.
  • Industry-Leading UIL & Short-Circuit Robustness Advantages.
  • Compatible with Commercial Gate Drivers.
  • Low Conduction Losses at all Temperatures.
  • Redu.

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Datasheet Details

Part number G2R1000MT17D
Manufacturer GeneSiC
File Size 2.88 MB
Description Silicon Carbide MOSFET
Datasheet download datasheet G2R1000MT17D Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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G2R1000MT17D 1700 V 1000 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G2R™ Technology • Softer RDS(ON) v/s Temperature Dependency • LoRing™ - Electromagnetically Optimized Design • Smaller RG(INT) and Lower QG • Low Device Capacitances (COSS, CRSS) • Superior Cost-Performance Index • Robust Body Diode with Low VF and Low QRR • Industry-Leading UIL & Short-Circuit Robustness Advantages • Compatible with Commercial Gate Drivers • Low Conduction Losses at all Temperatures • Reduced Ringing • Faster and More Efficient Switching • Lesser Switching Spikes and Lower Losses • Better Power Density and System Efficiency • Ease of Paralleling without Thermal Runaway • Higher System Reliability TM Package TO-247-3 VDS RDS(ON)(Typ.