G2R1000MT17J Description
G2R1000MT17J 1700 V 1000 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode.
G2R1000MT17J Key Features
- G2R™ Technology
- Softer RDS(ON) v/s Temperature Dependency
- LoRing™
- Electromagnetically Optimized Design
- Smaller RG(INT) and Lower QG
- Low Device Capacitances (COSS, CRSS)
- Industry-Leading UIL & Short-Circuit Robustness
- Robust Body Diode with Low VF and Low QRR
- Optimized Package with Separate Driver Source Pin
- patible with mercial Gate Drivers