G2R120MT33-CAL Description
G2R120MT33-CAL 3300 V 120 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode.
G2R120MT33-CAL Key Features
- G2R™ Technology with +20 V Gate Drive
- Superior QG x RDS(ON) Figure of Merit
- Superior Cost-Performance Index
- Low Capacitances and Low Gate Charge
- Fast and Reliable Body Diode
- Low Losses at All Temperatures
- Optimized Package with Separate Driver Source Pin
- patible with mercial Gate Drivers
- Increased Power Density for pact System
- High Frequency Switching