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G2R120MT33-CAL - Silicon Carbide MOSFET

Datasheet Summary

Features

  • G2R™ Technology with +20 V Gate Drive.
  • Superior QG x RDS(ON) Figure of Merit.
  • Superior Cost-Performance Index.
  • Low Capacitances and Low Gate Charge.
  • Fast and Reliable Body Diode.
  • Low Losses at All Temperatures.
  • Optimized Package with Separate Driver Source Pin Advantages.
  • Compatible with Commercial Gate Drivers.
  • Increased Power Density for Compact System.
  • High Frequency Switching.
  • Improved Thermal.

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Datasheet preview – G2R120MT33-CAL

Datasheet Details

Part number G2R120MT33-CAL
Manufacturer GeneSiC
File Size 875.30 KB
Description Silicon Carbide MOSFET
Datasheet download datasheet G2R120MT33-CAL Datasheet
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Full PDF Text Transcription

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G2R120MT33-CAL 3300 V 120 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G2R™ Technology with +20 V Gate Drive • Superior QG x RDS(ON) Figure of Merit • Superior Cost-Performance Index • Low Capacitances and Low Gate Charge • Fast and Reliable Body Diode • Low Losses at All Temperatures • Optimized Package with Separate Driver Source Pin Advantages • Compatible with Commercial Gate Drivers • Increased Power Density for Compact System • High Frequency Switching • Improved Thermal Capability • Ease of Paralleing without Thermal Runaway TM VDS = RDS(ON)(Typ.
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