G2R120MT33-CAL - Silicon Carbide MOSFET

GeneSiC

Key Features

G2R™ Technology with +20 V Gate Drive.
Superior QG x RDS(ON) Figure of Merit.
Superior Cost-Performance Index.
Low Capacitances and Low Gate Charge.
Fast and Reliable Body Diode.
Low Losses at All Temperatures.
Optimized Package with Separate Driver Source Pin Advantages.
Compatible with Commercial Gate Drivers.
Increased Power Density for Compact System.
High Frequency Switching.
Improved Thermal.

G2R120MT33-CAL silicon carbide mosfet by GeneSiC - Datasheet Preview

Datasheet Details

Part number	G2R120MT33-CAL
Manufacturer	GeneSiC
File Size	875.30 KB
Description	Silicon Carbide MOSFET
Datasheet	G2R120MT33-CAL Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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G2R120MT33-CAL 3300 V 120 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G2R™ Technology with +20 V Gate Drive • Superior QG x RDS(ON) Figure of Merit • Superior Cost-Performance Index • Low Capacitances and Low Gate Charge • Fast and Reliable Body Diode • Low Losses at All Temperatures • Optimized Package with Separate Driver Source Pin Advantages • Compatible with Commercial Gate Drivers • Increased Power Density for Compact System • High Frequency Switching • Improved Thermal Capability • Ease of Paralleing without Thermal Runaway TM VDS = RDS(ON)(Typ.