G2R120MT33J Description
G2R120MT33J 3300 V 120 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode.
G2R120MT33J Key Features
- Softer RDS(ON) v/s Temperature Dependency
- LoRing™
- Electromagnetically Optimized Design
- Smaller RG(INT) and Lower QG
- Low Device Capacitances (COSS, CRSS)
- Industry-Leading UIL & Short-Circuit Robustness
- Robust Body Diode with Low VF and Low QRR
- Normally Off-Stable Temperature up to 175°C
- Optimized Package with Separate Driver Source Pin
- patible with mercial Gate Drivers