G3R20MT12-CAL Datasheet | GeneSiC

G3R20MT12-CAL 1200 V 20 mΩ Si C MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features - G3R™ (3rd Generation) Technology - Softer RDS(ON) v/s Temperature Dependency - Lo Ring™ - Electromagnetically Optimized Design - Smaller RG(INT) and Lower QG - Low Device Capacitances (COSS, CRSS) - Superior Cost-Performance Index - Robust Body Diode with Low VF and Low QRR - Industry-Leading UIL & Short-Circuit Robustness Advantages - patible with mercial Gate Drivers - Low Conduction Losses at all Temperatures - Reduced Ringing - Faster and More Efficient Switching - Lesser Switching Spikes and Lower Losses - Better Power Density and System Efficiency - Ease of Paralleling without Thermal Runaway - Higher System Reliability = RDS(ON)(Typ.) = ID (TC = 100°C) = 1200 V 20 mΩ 80 A Bare Chip D = Drain G = Gate S =...