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G3R20MT12N 1200 V 20 mΩ SiC MOSFET
Silicon Carbide MOSFET
N-Channel Enhancement Mode
Features
• G3R™ Technology - +15 V / -5 V Gate Drive • Superior QG x RDS(ON) Figure of Merit • Low Capacitances and Low Gate Charge • Normally-Off Stable Operation up to 175°C • Fast and Reliable Body Diode • High Avalanche and Short Circuit Ruggedness • Low Conduction Losses at High Temperatures • Optimized Package with Separate Driver Source Pin
Advantages
• Increased Power Density for Compact System • High Frequency Switching • Reduced Losses for Higher System Efficiency • Minimized Gate Ringing • Improved Thermal Capability • Superior Cost-Performance Index • Ease of Paralleing without Thermal Runaway • Simple to Drive
TM
VDS
=
RDS(ON)(Typ.