G3R20MT12N Datasheet PDF (Silicon Carbide MOSFET)

G3R20MT12N - Silicon Carbide MOSFET

Features

G3R™ Technology - +15 V / -5 V Gate Drive.
Superior QG x RDS(ON) Figure of Merit.
Low Capacitances and Low Gate Charge.
Normally-Off Stable Operation up to 175°C.
Fast and Reliable Body Diode.
High Avalanche and Short Circuit Ruggedness.
Low Conduction Losses at High Temperatures.
Optimized Package with Separate Driver Source Pin Advantages.
Increased Power Density for Compact System.
High Frequency Switch.

Datasheet Details

Part number	G3R20MT12N
Manufacturer	GeneSiC
File Size	1.15 MB
Description	Silicon Carbide MOSFET
Datasheet	G3R20MT12N Datasheet
Additional preview pages of the G3R20MT12N datasheet.

📁 Similar Datasheet

G3R - Solid State Relays (Omron)

G3R-102PLN - Solid State Relays (Omron)

G3R-102PN - Solid State Relays (Omron)

G3R-202PLN - Solid State Relays (Omron)

G3R-202PN - Solid State Relays (Omron)

G3R-I - Solid State Relays (Omron)

G3R-IAZR1SN - Solid State Relays (Omron)

G3R-IDZR1SN - Solid State Relays (Omron)

G3R-IDZR1SN-1 - Solid State Relays (Omron)

G3R-O - Solid State Relays (Omron)

Full PDF Text Transcription

Click to expand full text

G3R20MT12N 1200 V 20 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology - +15 V / -5 V Gate Drive • Superior QG x RDS(ON) Figure of Merit • Low Capacitances and Low Gate Charge • Normally-Off Stable Operation up to 175°C • Fast and Reliable Body Diode • High Avalanche and Short Circuit Ruggedness • Low Conduction Losses at High Temperatures • Optimized Package with Separate Driver Source Pin Advantages • Increased Power Density for Compact System • High Frequency Switching • Reduced Losses for Higher System Efficiency • Minimized Gate Ringing • Improved Thermal Capability • Superior Cost-Performance Index • Ease of Paralleing without Thermal Runaway • Simple to Drive TM VDS = RDS(ON)(Typ.

Published: Nov 26, 2024 |