G3R20MT12N Description
G3R20MT12N 1200 V 20 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode.
G3R20MT12N Key Features
- G3R™ Technology
- +15 V / -5 V Gate Drive
- Superior QG x RDS(ON) Figure of Merit
- Low Capacitances and Low Gate Charge
- Normally-Off Stable Operation up to 175°C
- Fast and Reliable Body Diode
- High Avalanche and Short Circuit Ruggedness
- Low Conduction Losses at High Temperatures
- Optimized Package with Separate Driver Source Pin
- Increased Power Density for pact System