G3R20MT12N
G3R20MT12N is Silicon Carbide MOSFET manufactured by GeneSiC.
G3R20MT12N 1200 V 20 mΩ Si C MOSFET
Silicon Carbide MOSFET
N-Channel Enhancement Mode
Features
- G3R™ Technology
- +15 V / -5 V Gate Drive
- Superior QG x RDS(ON) Figure of Merit
- Low Capacitances and Low Gate Charge
- Normally-Off Stable Operation up to 175°C
- Fast and Reliable Body Diode
- High Avalanche and Short Circuit Ruggedness
- Low Conduction Losses at High Temperatures
- Optimized Package with Separate Driver Source Pin
Advantages
- Increased Power Density for pact System
- High Frequency Switching
- Reduced Losses for Higher System Efficiency
- Minimized Gate Ringing
- Improved Thermal Capability
- Superior Cost-Performance Index
- Ease of Paralleing without Thermal Runaway
- Simple to Drive
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RDS(ON)(Typ.) =
ID (TC = 100°C) =
1200 V 20 mΩ 74 A
Package SOT-227
D = Drain
G = Gate
S =...
