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G3R20MT12N - Silicon Carbide MOSFET

Key Features

  • G3R™ Technology - +15 V / -5 V Gate Drive.
  • Superior QG x RDS(ON) Figure of Merit.
  • Low Capacitances and Low Gate Charge.
  • Normally-Off Stable Operation up to 175°C.
  • Fast and Reliable Body Diode.
  • High Avalanche and Short Circuit Ruggedness.
  • Low Conduction Losses at High Temperatures.
  • Optimized Package with Separate Driver Source Pin Advantages.
  • Increased Power Density for Compact System.
  • High Frequency Switch.

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Datasheet Details

Part number G3R20MT12N
Manufacturer GeneSiC
File Size 1.15 MB
Description Silicon Carbide MOSFET
Datasheet download datasheet G3R20MT12N Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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G3R20MT12N 1200 V 20 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology - +15 V / -5 V Gate Drive • Superior QG x RDS(ON) Figure of Merit • Low Capacitances and Low Gate Charge • Normally-Off Stable Operation up to 175°C • Fast and Reliable Body Diode • High Avalanche and Short Circuit Ruggedness • Low Conduction Losses at High Temperatures • Optimized Package with Separate Driver Source Pin Advantages • Increased Power Density for Compact System • High Frequency Switching • Reduced Losses for Higher System Efficiency • Minimized Gate Ringing • Improved Thermal Capability • Superior Cost-Performance Index • Ease of Paralleing without Thermal Runaway • Simple to Drive TM VDS = RDS(ON)(Typ.