G3R20MT17N Datasheet PDF (Silicon Carbide MOSFET)

G3R20MT17N - Silicon Carbide MOSFET

Features

G3R™ Technology with +15 V Gate Drive.
Softer RDS(ON) v/s Temperature Dependency.
LoRing™ - Electromagnetically Optimized Design.
Smaller RG(INT) and Lower QG.
Low Device Capacitances (COSS, CRSS).
Industry-Leading UIL & Short-Circuit Robustness.
Robust Body Diode with Low VF and Low QRR.
Isolated Back-Side Advantages.
Compatible with Commercial Gate Drivers.
Low Conduction Losses at all Temperatures.

Datasheet Details

Part number	G3R20MT17N
Manufacturer	GeneSiC
File Size	1.39 MB
Description	Silicon Carbide MOSFET
Datasheet	G3R20MT17N Datasheet
Additional preview pages of the G3R20MT17N datasheet.

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Full PDF Text Transcription

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G3R20MT17N 1700 V 20 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology with +15 V Gate Drive • Softer RDS(ON) v/s Temperature Dependency • LoRing™ - Electromagnetically Optimized Design • Smaller RG(INT) and Lower QG • Low Device Capacitances (COSS, CRSS) • Industry-Leading UIL & Short-Circuit Robustness • Robust Body Diode with Low VF and Low QRR • Isolated Back-Side Advantages • Compatible with Commercial Gate Drivers • Low Conduction Losses at all Temperatures • Reduced Ringing • Faster and More Efficient Switching • Lesser Switching Spikes and Lower Losses • Superior Robustness and System Reliability • Ease of Paralleling without Thermal Runaway • Better Power Density and System Efficiency TM VDS = RDS(ON)(Typ.

Published: Dec 8, 2024 |