G3R20MT17N Overview
G3R20MT17N 1700 V 20 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode.
G3R20MT17N Key Features
- G3R™ Technology with +15 V Gate Drive
- Softer RDS(ON) v/s Temperature Dependency
- LoRing™
- Electromagnetically Optimized Design
- Smaller RG(INT) and Lower QG
- Low Device Capacitances (COSS, CRSS)
- Industry-Leading UIL & Short-Circuit Robustness
- Robust Body Diode with Low VF and Low QRR
- Isolated Back-Side
- patible with mercial Gate Drivers