G3R20MT17N
G3R20MT17N is Silicon Carbide MOSFET manufactured by GeneSiC.
G3R20MT17N 1700 V 20 mΩ Si C MOSFET
Silicon Carbide MOSFET
N-Channel Enhancement Mode
Features
- G3R™ Technology with +15 V Gate Drive
- Softer RDS(ON) v/s Temperature Dependency
- Lo Ring™
- Electromagnetically Optimized Design
- Smaller RG(INT) and Lower QG
- Low Device Capacitances (COSS, CRSS)
- Industry-Leading UIL & Short-Circuit Robustness
- Robust Body Diode with Low VF and Low QRR
- Isolated Back-Side
Advantages
- patible with mercial Gate Drivers
- Low Conduction Losses at all Temperatures
- Reduced Ringing
- Faster and More Efficient Switching
- Lesser Switching Spikes and Lower Losses
- Superior Robustness and System Reliability
- Ease of Paralleling without Thermal Runaway
- Better Power Density and System Efficiency
=
RDS(ON)(Typ.) =
ID(TC = 100°C) =
1700 V 20 mΩ 60 A
Package
SOT-227
D = Drain
G =...
