G3R60MT07D Description
G3R60MT07D 750 V 60 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode.
G3R60MT07D Key Features
- G3R™ Technology with +15 V Gate Drive
- Softer RDS(ON) v/s Temperature Dependency
- LoRing™
- Electromagnetically Optimized Design
- Smaller RG(INT) and Lower QG
- Low Device Capacitances (COSS, CRSS)
- Superior Cost-Performance Index
- Robust Body Diode with Low VF and Low QRR
- 100% Avalanche (UIL) Tested
- patible with mercial Gate Drivers