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G3R60MT07J - SiC MOSFET

Features

  • G3R™ Technology with +15 V Gate Drive.
  • Softer RDS(ON) v/s Temperature Dependency.
  • LoRing™ - Electromagnetically Optimized Design.
  • Smaller RG(INT) and Lower QG.
  • Low Device Capacitances (COSS, CRSS).
  • Superior Cost-Performance Index.
  • Robust Body Diode with Low VF and Low QRR.
  • 100% Avalanche (UIL) Tested Advantages.
  • Compatible with Commercial Gate Drivers.
  • Low Conduction Losses at all Temperatures.
  • Re.

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Datasheet preview – G3R60MT07J

Datasheet Details

Part number G3R60MT07J
Manufacturer GeneSiC
File Size 1.31 MB
Description SiC MOSFET
Datasheet download datasheet G3R60MT07J Datasheet
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Full PDF Text Transcription

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G3R60MT07J 750 V 60 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology with +15 V Gate Drive • Softer RDS(ON) v/s Temperature Dependency • LoRing™ - Electromagnetically Optimized Design • Smaller RG(INT) and Lower QG • Low Device Capacitances (COSS, CRSS) • Superior Cost-Performance Index • Robust Body Diode with Low VF and Low QRR • 100% Avalanche (UIL) Tested Advantages • Compatible with Commercial Gate Drivers • Low Conduction Losses at all Temperatures • Reduced Ringing • Faster and More Efficient Switching • Lesser Switching Spikes and Lower Losses • Better Power Density and System Efficiency • Ease of Paralleling without Thermal Runaway • Superior Robustness and System Reliability TM VDS = RDS(ON)(Typ.
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