GA10JT12-263 Description
Normally OFF Silicon Carbide Junction Transistor.
GA10JT12-263 Key Features
- 175 °C Maximum Operating Temperature
- Gate Oxide Free SiC Switch
- Exceptional Safe Operating Area
- Excellent Gain Linearity
- Temperature Independent Switching Performance
- Low Output Capacitance
- Positive Temperature Coefficient of RDS,ON
- Suitable for Connecting an Anti-parallel Diode
- patible with Si MOSFET/IGBT Gate Drive ICs
- > 20 µs Short-Circuit Withstand Capability