GA10JT12-263
GA10JT12-263 is Normally - OFF Silicon Carbide Junction Transistor manufactured by GeneSiC.
Normally
- OFF Silicon Carbide Junction Transistor
Features
- 175 °C Maximum Operating Temperature
- Gate Oxide Free SiC Switch
- Exceptional Safe Operating Area
- Excellent Gain Linearity
- Temperature Independent Switching Performance
- Low Output Capacitance
- Positive Temperature Coefficient of RDS,ON
- Suitable for Connecting an Anti-parallel Diode
Advantages
- patible with Si MOSFET/IGBT Gate Drive ICs
- > 20 µs Short-Circuit Withstand Capability
- Lowest-in-class Conduction Losses
- High Circuit Efficiency
- Minimal Input Signal Distortion
- High Amplifier Bandwidth
Package
- RoHS pliant
VDS RDS(ON) ID (Tc = 25°C) hFE (Tc = 25°C)
= = = =
1200 V 120 mΩ 25 A...
