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GA10JT12-CAL
Normally – OFF Silicon Carbide Junction Transistor
Features
250 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity Temperature Independent Switching Performance Low Output Capacitance Positive Temperature Coefficient of RDS,ON Suitable for Connecting an Anti-parallel Diode
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs > 20 µs Short-Circuit Withstand Capability Lowest-in-class Conduction Losses High Circuit Efficiency Minimal Input Signal Distortion High Amplifier Bandwidth
Package
VDS RDS(ON) ID (Tc = 25°C) hFE (Tc = 25°C)
= = = =
1200 V 120 mΩ 25 A 80
D
G S
Applications
Down Hole Oil Drilling, Geothermal Instrumentation Hybrid Electric Vehicles (HEV) Solar In
GA10JT12-CAL Datasheet
