General Semiconductor BAS4
Schottky Diodes
FEATURES
♦ These diodes feature very low turn-on Top View .056 (1.43) .052 (1.33) voltage and fast switching. ♦ These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. 1 2 max. .004 (0.1) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) .045 (1.15) .037 (0.95) .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4)MECHANICAL DATA
Case: SOT-23 Plastic Package Weight: approx. 0.008 g Dimensions in inches and (millimeters) 3 3 Top View 1 2 1 2 BAS40 Marking: 43 3 BAS40-04 Marking: 44 3 Top View 1 2 1 2 BAS40-05 Marking: 45 BAS40-06 Marking: 46MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
FOR ONE DIODE Ratings at 25 °C ambient temperature unless otherwise specified Symbol Repetitive Peak Reverse Voltage Forward Continuous Current at Tamb = 25 °C Surge Forward Current at tp < 1 s, Tamb = 25 °C Power Dissipation1) at Tamb = 25 °C Junction Temperature Storage Temperature Range 1) Value 40 2001) 6001) 2001) 150 –55 to +150 Unit V mA mA mW °C °...