Infineon Technologies BAS4
Silicon Schottky Diode
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Non-repetitive peak surge forward current t ≤ 10ms Total power dissipation BAS140W, TS ≤ 113°C BAS40, BAS40-07, TS ≤ 81°C BAS40-02L, TS ≤ 127°C BAS40-04, BAS40-06, TS ≤ 56°C BAS40-06W, TS ≤ 106°C BAS40-05, TS ≤ 31°C BAS40-05W, TS ≤ 98°C BAS40-07W, TS ≤ 118°C Junction temperature Operating temperature range Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BAS140W BAS40, BAS40-07 BAS40-02L BAS40-04, BAS40-06 BAS40-06W BAS40-05 BAS40-05W BAS40-07W 1For Symbol VR IF IFSM Ptot Value 40 120 200 Unit V mA mW 250 250 250 250 250 250 250 250 Tj Top Tstg Symbol RthJS 150 -55 ... 125 -55 ... 150 °C Value ≤ 150 ≤ 275 ≤ 90 ≤ 375 ≤ 175 ≤ 475 ≤ 205 ≤ 125 Unit K/W calculation of RthJA please refer to Application Note Thermal Resistance 2 Jan-16-2004 BAS40.../BAS140WELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter DC Characteristics Breakdown voltage I (BR) = 10 µA V(BR) IR VF Symbol min.