NXP Semiconductors BAS4
The marking band indicates the cathode. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied.| Part No. | BAS4 |
|---|---|
| Datasheet | BAS4 Download |
| Manufacturer |  NXP Semiconductors |
| Description | Low-leakage diode |
| Buy | Stock & Price |
FEATURES
● Continuous reverse voltage: max. 125 V● Repetitive peak forward current: max. 625 mA
● Low reverse current: max. 1 nA
● Switching time: typ. 1.5 µs. APPLICATION
● Low leakage current applications. handbook, 4 columns BAS45AL
DESCRIPTION
Epitaxial medium-speed switching diode with a low leakage current in a small SOD80C glass SMD package. k a MAM061 Fig.1 Simplified outline (SOD80C) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 tp = 1 µs tp = 1 ms tp = 1 s Ptot Tstg Tj Note 1. Device mounted on a FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − 4 1 0.5 400 +175 175 A A A mW °C °C note 1; see Fig.2 CONDITIONS − − − − MIN.
