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BAS4 - Low-leakage diode

General Description

Epitaxial medium-speed switching diode with a low leakage current in a small SOD80C glass SMD package.

Fig.1 Simplified outline (SOD80C) and symbol.

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).

Key Features

  • Continuous reverse voltage: max. 125 V.
  • Repetitive peak forward current: max. 625 mA.
  • Low reverse current: max. 1 nA.
  • Switching time: typ. 1.5 µs.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BAS45AL Low-leakage diode Product specification Supersedes data of 1999 May 04 1999 May 28 Philips Semiconductors Product specification Low-leakage diode FEATURES • Continuous reverse voltage: max. 125 V • Repetitive peak forward current: max. 625 mA • Low reverse current: max. 1 nA • Switching time: typ. 1.5 µs. APPLICATION • Low leakage current applications. handbook, 4 columns BAS45AL DESCRIPTION Epitaxial medium-speed switching diode with a low leakage current in a small SOD80C glass SMD package. k a MAM061 Fig.1 Simplified outline (SOD80C) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).