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BAS40L - Schottky barrier diode

General Description

Planar Schottky barrier diode with an integrated guard ring for stress protection.

Encapsulated in a SOD882 leadless ultra small plastic package.

Ultra high-speed switching Voltage clamping Protection circuits Mobile communica

Key Features

  • Low diode capacitance.
  • Low forward voltage.
  • Guard ring protected.
  • High breakdown voltage.
  • Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm).
  • Boardspace 1.17 mm2 (approx. 10% of SOT23).
  • Power dissipation comparable to SOT23. Bottom view MDB391 BAS40L.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS40L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode FEATURES • Low diode capacitance • Low forward voltage • Guard ring protected • High breakdown voltage • Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm) • Boardspace 1.17 mm2 (approx. 10% of SOT23) • Power dissipation comparable to SOT23. Bottom view MDB391 BAS40L DESCRIPTION Planar Schottky barrier diode with an integrated guard ring for stress protection. Encapsulated in a SOD882 leadless ultra small plastic package.