General Semiconductor BAT41
Schottky Diodes
| Part No. | BAT41 |
|---|---|
| Datasheet | BAT41 Download |
| Manufacturer |  General Semiconductor |
| Description | Schottky Diodes |
| Buy | Stock & Price |
FEATURES
♦ For general purpose applications ♦ This diode featutres low turn-on voltage max. ∅.079 (2.0) max. .150 (3.8) and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. with type designation LL41. Cathode Mark min. 1.083 (27.5) ♦ This diode is also available in a MiniMELF case max. ∅.020 (0.52)MECHANICAL DATA
Dimensions in inches and (millimeters) Case: DO-35 Glass Case Weight: approx. 0.13 gMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified Symbol Repetitive Peak Reverse Voltage Forward Continuous Current at Tamb = 25 °C Repetitive Peak Forward Current at tp < 1 s, @ < 0.5, Tamb = 25 °C Surge Forward Current at tp = 10 ms, Tamb = 25 °C Power Dissipation, Tamb = 25 °C Junction Temperature Ambient Operating Temperature Range Storage Temperature Range 1) Value 100 1001) 3501) 7501) 4001) 125 –65 to +125 –65 to +150 Unit V mA mA mA mW °C °C °C VRRM IF IFRM ISFM Ptot Tj Tamb TS Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.