SD103C Datasheet | General Semiconductor

FEATURES - For general purpose applications. - The SD103 series is a metal-on-silicon max. ∅.079 (2.0) Cathode Mark min. 1.083 (27.5) Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications. Other applications are click suppression, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems. max. .150 (3.8) max. ∅.020 (0.52) - This diode is also available in Mini MELF case with the type designation LL103A … LL103C and SOD-123 case with the type designations SD103AW .. SD103CW. MECHANICAL DATA Dimensions in inches and (millimeters) Case: DO-35 Glass Case Weight: approx. 0.13 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Peak Inverse Voltage SD103A SD103B SD103C VRRM VRRM VRRM Ptot IFSM Tj TS Value 40 30 20 4001) 15 1251) - 55 to +1501) Unit V V V m W A °C °C Power Dissipation (Infinite Heat Sink) Single Cycle Surge 60 Hz Sine Wave Junction Temperature Storage Temperature Range 1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature 4/98 SD103A THRU SD103C ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Leakage Current at VR = 30 V at VR = 20 V at VR = 10 V Forward Voltage Drop at IF = 20 m A at IF = 200 m A Junction Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = IR = 50 m A to 200 m A, recover to 0.1 IR Thermal Resistance Junction to Ambient Air 1) Min. - - - - - - - - Typ. - - - - - 50 10 - Max. 5 5 5 0.37 0.6 - - 0.31) Unit µA µA µA V V p F ns K/m W SD103A SD103B SD103C IR IR IR VF VF Ctot trr Rth JA Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature (DO-35) RATINGS AND CHARACTERISTIC...