SD103C Datasheet and Specifications PDF

SD103A - SD103C SCHOTTKY BARRIER DIODE Features · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance A B A Mechanical .

*
*
*
* Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance A B A Mechanical Data
*
*
*
*
* Case: DO-35, Glass Leads: Solderable per MIL-STD-202, Method 208 Marking: Type Number Polarity: Cathode Band Weight: 0.13 grams (appr.

SD103A~SD103C SMALL SIGNAL SCHOTTKY BARRIES SWITCHING DIODES VOLTAGE 20 to 40 Volts CURRENT 0.35 Amperes FEATURES • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Low Re.

* Low Forward Voltage Drop
* Guard Ring Construction for Transient Protection
* Low Reverse Recovery Time
* Low Reverse Capacitance
* In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA
* Case: Molded Glass DO-35
* Terminals: Solderable per MIL-STD-750, Method 2026
* Polarity: See Diagr.

SD103A, SD103B, SD103C Vishay Semiconductors Small Signal Schottky Diodes MECHANICAL DATA Case: DO-35 Weight: approx. 125 mg Cathode band color: black Packaging codes/options: TR/10K.

* The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring
* The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications
* Ot.

MCC Features l l l Low Reverse Recovery Time Low Reverse Capacitance Low Forward Voltage Drop
  omponents 21201 Itasca Street Chatsworth    !"# $ %    .

l l l Low Reverse Recovery Time Low Reverse Capacitance Low Forward Voltage Drop
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# SD103A THRU SD103C Small Signal Schottky Diodes l Guard Ring Construction for Transient Protection M.