Datasheet Summary
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N-Channel Enhancement-Mode MOSFET
TO-220AB
0.415 (10.54) Max. 0.154 (3.91) Dia. 0.142 (3.60) 0.113 (2.87) 0.102 (2.56)
H C N ct E ET u R d T ENF ro P New G
®
0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14)
VDS 30V RDS(ON) 11mΩ ID 60A
- 0.155 (3.93) 0.134 (3.40) 0.603 (15.32) 0.573 (14.55) 0.635 (16.13) 0.580 (14.73) 0.360 (9.14) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.104 (2.64) 0.094 (2.39)
Features
- Advanced Trench Process Technology
- High Density Cell Design for Ultra Low On-Resistance
- Specially Designed for Low Voltage DC/DC Converters
- Fast Switching for High Efficiency
0.410 (10.41) 0.350 (8.89)
G PIN D S
0.160 (4.06) 0.09...