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GSM3112Z - 30V N-Channel MOSFETs

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 30V, 12.6A, RDS(ON)=10mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS guaranteed.
  • Green Device Available.

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Datasheet preview – GSM3112Z

Datasheet Details

Part number GSM3112Z
Manufacturer Globaltech
File Size 532.18 KB
Description 30V N-Channel MOSFETs
Datasheet download datasheet GSM3112Z Datasheet
Additional preview pages of the GSM3112Z datasheet.

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GSM3112Z 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features ◼ 30V, 12.
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