GSM3112Z Overview
Description
1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain.
Key Features
- 30V, 12.6A, RDS(ON)=10mΩ@VGS=10V
- Improved dv/dt capability
- Fast switching
- 100% EAS guaranteed
- Green Device Available
| Part | GSM3112Z |
|---|---|
| Description | 30V N-Channel MOSFETs |
| Category | MOSFET |
| Manufacturer | Globaltech |
| Size | 532.18 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| TJ60S04M3L | Toshiba | MOSFETs |
| QM3202S | UBIQ Semiconductor | Dual N-Ch 30V Fast Switching MOSFETs |
| PDS4701 | Potens semiconductor | N+P Channel MOSFETs |