GSM3118JZF Description
These N-Channel enhancement mode power field effectatransistorsaareausingatrenchaDMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provideasuperioraswitchingaperformance,aand withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
GSM3118JZF Key Features
- 30V, 5.9A, RDS(ON)=24mΩ@VGS=10V
- Improved dv/dt capability
- Fast switching
- Green Device Available
- SOT-23 package design