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GSMDC3801R Datasheet PDF

Globaltech GSMDC3801R

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
Part No. GSMDC3801R
Datasheet GSMDC3801R Download
Manufacturer
Globaltech
Description N-Channel Power MOSFET
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GSMDC3801R datasheet page 1 preview

DESCRIPTION

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

FEATURES

„ 30V, 55A, RDS(ON)=9mΩ@VGS=10V (Q1) „ 30V, 80A, RDS(ON)=6mΩ@VGS=10V (Q2) „ Improved dv/dt capability „ Fast switching „ 100% EAS guaranteed „ Green Device Available „ DFN5X6-8L package design

APPLICATIONS

„ MB / VGA / Vcore „ POL Buck

APPLICATIONS

„ SMPS 2nd SR Packages & Pin Assignments GSMDC3801RFF (DFN5X6-8L) GSMDC3801R Bottom View Pin

DESCRIPTION

1 Gate 1 2 Drain 1 3 Drain 1 4 Drain 1 5 Source 2 6 Source 2 7 Source 2 8 Gate 2 1 Ordering Information GS P/N GSMDC3801R F F Package Code Pb Free Code Part Number GSMDC3
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