GSMDC3812V - Dual N-Channel MOSFET

Product Overview

Globaltech

Datasheet Details

Part number	GSMDC3812V
Manufacturer	Globaltech
File Size	516.32 KB
Description	Dual N-Channel MOSFET
Datasheet	GSMDC3812V Datasheet
Additional preview pages of the GSMDC3812V datasheet.

GSMDC3812V Product details

Description

These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

30V, 20A, RDS(ON)=20mΩ@VGS=10V.
Improved dv/dt capability.
Fast switching.
100% EAS guaranteed.
Green Device Available.
DFN3X3-8L package design.

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Published: Sep 9, 2018 |