GSMDC3812V Datasheet | Globaltech

30V Dual N-Channel MOSFETs Product Description These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. Features - 30V, 20A, RDS(ON)=20mΩ@VGS=10V - Improved dv/dt capability - Fast switching - 100% EAS guaranteed - Green Device Available - DFN3X3-8L package design Applications - MB / VGA / Vcore - POL Applications - SMPS 2nd SR - Li-Battery Protection Packages & Pin Assignments GSMDC3812VFF (DFN3X3-8L) Top View Pin Description 1 Source 1 2 Gate 1 3 Source 2 4 Gate 2 5 Drain 2 6 Drain 2 7 Drain 1 8 Drain 1 .gs-power. 1 Ordering Information GS P/N GSMDC3812V F F Package Code Pb Free Code Part Number GSMDC3812VFF Package...