Datasheet Details
| Part number | GSMDC3812V |
|---|---|
| Manufacturer | Globaltech |
| File Size | 516.32 KB |
| Description | Dual N-Channel MOSFET |
| Datasheet |
 GSMDC3812V Datasheet
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General Description
These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 30V, 20A, RDS(ON)=20mΩ@VGS=10V.
- Improved dv/dt capability.
- Fast switching.
- 100% EAS guaranteed.
- Green Device Available.
- DFN3X3-8L package design.