DESCRIPTION
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. Packages & Pin Assignments GSMDS3710SF (SOP-8) FEATURES
N-Channel 30V, 10A, RDS(ON)=13mΩ@VGS=10V P-Channel -30V, -6.5A, RDS(ON)=28mΩ@VGS=-10V Fast switching Suit for 4.5V / -4.5V Gate Drive APPLICATIONS
Green Device Available SOP-8 package design APPLICATIONS
DC Fan Motor Drive APPLICATIONS
Networking Half / Full Bridge Topology GSMDS3710 Top View Pin DESCRIPTION
1 Source 1 2 Gate 1 3 Source 2 4 Gate 2 5 Drain 2 6 Drain 2 7 Drain 1 8 Drain 1 1 Ordering Information Part Number GSMDS3710SF Marking