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GSMDS3710 Datasheet PDF

Globaltech GSMDS3710

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
Part No. GSMDS3710
Datasheet GSMDS3710 Download
Manufacturer
Globaltech
Description N+P Dual-Channel MOSFET
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GSMDS3710 datasheet page 1 preview

DESCRIPTION

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. Packages & Pin Assignments GSMDS3710SF (SOP-8)

FEATURES

„ N-Channel 30V, 10A, RDS(ON)=13mΩ@VGS=10V „ P-Channel -30V, -6.5A, RDS(ON)=28mΩ@VGS=-10V „ Fast switching „ Suit for 4.5V / -4.5V Gate Drive

APPLICATIONS

„ Green Device Available „ SOP-8 package design

APPLICATIONS

„ DC Fan „ Motor Drive

APPLICATIONS

„ Networking „ Half / Full Bridge Topology GSMDS3710 Top View Pin

DESCRIPTION

1 Source 1 2 Gate 1 3 Source 2 4 Gate 2 5 Drain 2 6 Drain 2 7 Drain 1 8 Drain 1 1 Ordering Information Part Number GSMDS3710SF Marking
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