GSMDS3710 Datasheet | Globaltech

30V N+P Dual Channel MOSFETs Product Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. Packages & Pin Assignments GSMDS3710SF (SOP-8) Features - N-Channel 30V, 10A, RDS(ON)=13mΩ@VGS=10V - P-Channel -30V, -6.5A, RDS(ON)=28mΩ@VGS=-10V - Fast switching - Suit for 4.5V / -4.5V Gate Drive Applications - Green Device Available - SOP-8 package...