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GSMDS3710 Datasheet N+P Dual-Channel MOSFET

Manufacturer: Globaltech

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Datasheet Details

Part number GSMDS3710
Manufacturer Globaltech
File Size 821.11 KB
Description N+P Dual-Channel MOSFET
Download GSMDS3710 Download (PDF)

General Description

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency fast switching applications.

Overview

GSMDS3710 30V N+P Dual Channel MOSFETs Product.

Key Features

  • N-Channel 30V, 10A, RDS(ON)=13mΩ@VGS=10V.
  • P-Channel -30V, -6.5A, RDS(ON)=28mΩ@VGS=-10V.
  • Fast switching.
  • Suit for 4.5V / -4.5V Gate Drive.

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