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GSMDS3710 - N+P Dual-Channel MOSFET

Description

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

Features

  • N-Channel 30V, 10A, RDS(ON)=13mΩ@VGS=10V.
  • P-Channel -30V, -6.5A, RDS(ON)=28mΩ@VGS=-10V.
  • Fast switching.
  • Suit for 4.5V / -4.5V Gate Drive.

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Datasheet Details

Part number GSMDS3710
Manufacturer Globaltech
File Size 821.11 KB
Description N+P Dual-Channel MOSFET
Datasheet download datasheet GSMDS3710 Datasheet

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Full PDF Text Transcription

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GSMDS3710 30V N+P Dual Channel MOSFETs Product Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Packages & Pin Assignments GSMDS3710SF (SOP-8) Features „ N-Channel 30V, 10A, RDS(ON)=13mΩ@VGS=10V „ P-Channel -30V, -6.5A, RDS(ON)=28mΩ@VGS=-10V „ Fast switching „ Suit for 4.5V / -4.
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