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GSMDS3810 Datasheet PDF

Globaltech GSMDS3810

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
Part No. GSMDS3810
Datasheet GSMDS3810 Download
Manufacturer
Globaltech
Description Dual N-Channel MOSFET
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GSMDS3810 datasheet page 1 preview

DESCRIPTION

These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

FEATURES

„ 30V, 10A, RDS(ON)=13mΩ@VGS=10V „ Improved dv/dt capability „ Fast switching „ 100% EAS Guaranteed „ Green Device Available „ SOP-8 package design

APPLICATIONS

„ MB / VGA / Vcore „ POL

APPLICATIONS

„ SMPS 2nd SR Packages & Pin Assignments GSMDS3810SF (SOP-8) GSMDS3810 Top View Pin

DESCRIPTION

1 Source 1 2 Gate 1 3 Source 2 4 Gate 2 5 Drain 2 6 Drain 2 7 Drain 1 8 Drain 1 1 Ordering Information GS P/N GSMDS3810 S F Package Code Pb Free Code Part Number GSMDS3810SF Package SOP-8 Marking Information Quantity Ree
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