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GSMDS3810 - Dual N-Channel MOSFET

Description

These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 30V, 10A, RDS(ON)=13mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.
  • SOP-8 package design.

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Datasheet Details

Part number GSMDS3810
Manufacturer Globaltech
File Size 452.09 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet GSMDS3810 Datasheet

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Full PDF Text Transcription

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GSMDS3810 30V Dual N-Channel MOSFETs Product Description These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
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