GSMDS3810
GSMDS3810 is Dual N-Channel MOSFET manufactured by Globaltech.
30V Dual N-Channel MOSFETs
Product Description
These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
These devices are well suited for high efficiency fast switching applications.
Features
- 30V, 10A, RDS(ON)=13mΩ@VGS=10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
- SOP-8 package design
Applications
- MB / VGA / Vcore
- POL Applications
- SMPS 2nd SR
Packages & Pin Assignments
GSMDS3810SF...
