SSFP6N10 - Power MOSFET

This page provides the datasheet information for the SSFP6N10, a member of the SSFP6N10-Good Power MOSFET family.

Datasheet Summary

Description

StarMOS is a new generation of high voltage N

Channel enhancement mode power MOSFETs.

This new technology minimises the JFET effect, increases packing density and reduces the on-resistance.

Good-Ark

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Datasheet Details

Part number	SSFP6N10
Manufacturer	Good-Ark
File Size	122.42 KB
Description	Power MOSFET
Datasheet	SSFP6N10 Datasheet
Additional preview pages of the SSFP6N10 datasheet.

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Full PDF Text Transcription

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SSFP6N10 StarMOST Power MOSFET ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Description StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology. Application ■ Switching application VDSS = 100V ID25 = 5.6A RDS(ON) = 0.

Published: May 7, 2015 |