Good-Ark Semiconductor BAS16
Switching Diode
| Part No. | BAS16 |
|---|---|
| Datasheet | BAS16 Download |
| Manufacturer |  Good-Ark Semiconductor |
| Description | Switching Diode |
| Buy | Stock & Price |
FEATURES
● Fast switching speed● Power dissipation of 225mW
● High stability and high reliability
● Low reverse leakage
● Lead free/RoHS compliant BAS16 Switching Diode 3 2 1 SOT-23 Schematic Diagram
ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise noted） Parameters Symbol Value Reverse Voltage Peak Repetitive Reverse Voltage VR 75 VRRM 100 Power Dissipation Average Rectified Current Peak Forward Surge Current @ Tp=1us (TA=25 ℃) Operating Junction Temperature Storage Temperature Range PD 225 IO 150 IFSM 2.0 TJ 150 Ts -55 to +150 Thermal Resistance from Junction to Ambient RθJA 556 Unit V V mW mA A ℃ ℃ ℃/WELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted） Parameter Symbols Test Condition Min Reverse Voltage VBR IR=100uA 75 Reverse Leakage Current IR VR=75V - IF=1.0mA - Forward Voltage VF IF=10mA - IF=50mA - IF=150mA - IF=IR=10mA Reverse Recovery Time TRR RL=100Ω - Capacitance IRR=0.1 X IR CT VR=0V, F=1MHZ - Max Unit - V 1 uA 0.715 0.855 V 1.00 1.25 6 nS 2 pF 1/3 Typical Characteristic Curves BAS16 Switching Diode IR, Reverse Current (nA) IF, Forward Current (mA) VF, Forward Voltage (V) Figure 1.
