Good-Ark Semiconductor BC847PN
NPN+PNP Dual Transistors
FEATURES
● Epitaxial planar die construction● Power Dissipation of 200mW
● Two internal isolated NPN/PNP transistors in one package
● RoHS Compliant
APPLICATIONS
● General purpose small signal amplifierMECHANICAL DATA
● Package: SOT-363● Lead Finish:Matte Tin
● Case Material: “Green” Molding Compound
● UL Flammability Classification Rating 94V-0
● Moisture Sensitivity: Level 3 per J-STD-020 Pb RoHS COMPLIANT Marking: .7P SOT -363 7P Pin definitiSoOnT- - Epuivalent circuit 2.5:Base 1.4:Emitter 3.6:Collector
MAXIMUM RATINGS
&ELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise noted) Parameter Symbol Value TR1 TR2 Unit V Collector-Base Voltage VCBO 50 -50 V Collector-Emitter Voltage VCEO 45 -45 V Emitter-Base Voltage VEBO 6 -5 V Collector Current Continuous IC 100 -100 mA Collector Power Dissipation PD 200 mW Operating Junction temperature TJ -55 to +150 ℃ Storage Temperature Range TSTG -55 to +150 ℃ 1 Doc.No.672065 BC847PN GOOD-ARK Electronics TR1 NPNELECTRICAL SPECIFICATIONS
(TA=25℃...