Good-Ark Semiconductor GDSSF2312
The SSF2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.| Part No. | GDSSF2312 |
|---|---|
| Datasheet | GDSSF2312 Download |
| Manufacturer |  Good-Ark Semiconductor |
| Description | MOSFET |
| Buy | Stock & Price |
DESCRIPTION
GENERAL FEATURES
● VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package D G S Schematic diagram Application
●Battery protection
●Load switch
●Power management PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 2312 SSF2312 SOT-23 Ø180mm 3D 2312 G1 2S SOT-23 top view Marking and pin Assignment Tape width 8 mm Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous@ Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 20 ±8 4.5 13.5 1.25 -55 To 150 Unit V V A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 100 ℃/W Suzhou Goodark Electronics Co., Ltd Version 1.0 GDSSF2312ELECTRICAL CHARACTERISTICS
(TA=25℃unless...
