Good-Ark Semiconductor MMDT3906
Dual PNP Transistor
FEATURES
● Ideal for low power amplification and switching● Plastic-Encapsulate transistor
● Epitaxial planar die construction MMDT3906 Dual PNP Transistor
ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Thermal Resistance from Junction to Ambient Air Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ TSTG Value -40 -40 -5 -200 200 625 -55 to +150 -55 to +150 Unit V V V mA mW ℃/W ℃ ℃ SOT-363 Schematic DiagramELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Base Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure Delay Time Rise Time