Good-Ark Semiconductor PXT2222A
NPN Transistor
| Part No. | PXT2222A |
|---|---|
| Datasheet | PXT2222A Download |
| Manufacturer |  Good-Ark Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
● Epitaxial planar die construction● Complementary PNP Type available (PXT2907A) 1. BASE 2. COLLECTOR
ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise noted) Parameter Symbol 3. EMITTER Max. SOT-89-3L Unit Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current-Continuous IC 600 mA Collector Power Dissipation PC 0.5 W Operating Junction Temperature Range TJ -55 To +150 °C Storage Temperature Range TSTG -55 To +150 °C Thermal Resistance, Junction to Ambient RθJA 250 °C/WELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted) Parameter Symbol Conditions Collector-Base Breakdown Voltage V(BR)CBO IC= 10uA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO IE=10uA, IC=0 Collector Cut-off Current ICBO VCB= 60V, IE=0 Emitter Cut-off Current IEBO VEB= 5V, IC=0 hFE(1) hFE(2) VCE=10V, IC=0.1mA VCE=10V, IC=1mA DC Current Gain hFE(3) hFE(4) hFE(5) VCE=10V, IC=10mA VCE...
