GPT12N45 - POWER FIELD EFFECT TRANSISTOR

Product Overview

Part number	GPT12N45
Manufacturer	Greatpower
File Size	1.18 MB
Description	POWER FIELD EFFECT TRANSISTOR
Datasheet	GPT12N45 Datasheet
Additional preview pages of the GPT12N45 datasheet.

This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offer.

📁 Similar Datasheet

Other Datasheets by Greatpower

Published: Nov 8, 2017 |