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GPT12N60D - POWER FIELD EFFECT TRANSISTOR

Download the GPT12N60D datasheet PDF. This datasheet also covers the GPT12N60 variant, as both devices belong to the same power field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GPT12N60-Greatpower.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GPT12N60D
Manufacturer Greatpower
File Size 1.17 MB
Description POWER FIELD EFFECT TRANSISTOR
Datasheet download datasheet GPT12N60D Datasheet

Full PDF Text Transcription

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GPT12N60 / GPT12N60D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
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