Datasheet4U Logo Datasheet4U.com

GPT12N50D Datasheet Power Field Effect Transistor

Manufacturer: Greatpower

Overview: GPT12N50 / GPT12N50D POWER FIELD EFFECT TRANSISTOR GENERAL.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offer.

GPT12N50D Distributor