GPT12N50D datasheet by Greatpower.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | GPT12N50D |
|---|---|
| Datasheet | GPT12N50D GPT12N50 Datasheet (PDF) |
| File Size | 1.28 MB |
| Manufacturer | Greatpower |
| Description | POWER FIELD EFFECT TRANSISTOR |
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FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time parable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and mutation modes. The new energy...
View all Greatpower datasheets
| Part Number | Description |
|---|---|
| GPT12N50 | POWER FIELD EFFECT TRANSISTOR |
| GPT12N45 | POWER FIELD EFFECT TRANSISTOR |
| GPT12N45D | POWER FIELD EFFECT TRANSISTOR |
| GPT12N60 | POWER FIELD EFFECT TRANSISTOR |
| GPT12N60D | POWER FIELD EFFECT TRANSISTOR |
| GPT10N45 | POWER FIELD EFFECT TRANSISTOR |
| GPT10N45D | POWER FIELD EFFECT TRANSISTOR |
| GPT10N50A | POWER FIELD EFFECT TRANSISTOR |
| GPT10N50AD | POWER FIELD EFFECT TRANSISTOR |
| GPT10N60 | POWER FIELD EFFECT TRANSISTOR |
