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2SB736 - PNP Silicon Epitaxial Transistor

Key Features

  • 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating -60 -60 -5.0 -300 200 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitte.

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Datasheet Details

Part number 2SB736
Manufacturer Guangdong Kexin Industrial
File Size 59.09 KB
Description PNP Silicon Epitaxial Transistor
Datasheet download datasheet 2SB736 Datasheet

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SMD Type PNP Silicon Epitaxial Transistor 2SB736 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Micro package. Complementary to 2SD780. High DC Current Gain: hFE = 200 TYP. (VCE = -1.0 V, IC = -50 mA) +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating -60 -60 -5.