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2SB1667 - Silicon PNP Triple Diffused Type Transistor

Key Features

  • Low collector saturation voltage. Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25 TC = 25 Junction temperature Storag.

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Datasheet Details

Part number 2SB1667
Manufacturer Guangdong Kexin Industrial
File Size 67.00 KB
Description Silicon PNP Triple Diffused Type Transistor
Datasheet download datasheet 2SB1667 Datasheet

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www.DataSheet4U.com SMD Type Silicon PNP Triple Diffused Type 2SB1667 TO-252 +0.15 1.50 -0.15 Transistors Features Low collector saturation voltage. Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25 TC = 25 Junction temperature Storage temperature range Tj Tstg Symbol VCBO VCEO VEBO IC IB PC Rating -60 -60 -7 -3 -0.5 1.5 25 150 -55 to +150 Unit V V V A A W W 3 .8 0 www.kexin.com.cn 1 www.DataSheet4U.