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BAT854CW - Schottky barrier (double) diodes

Download the BAT854CW datasheet PDF. This datasheet also covers the BAT854AW variant, as both devices belong to the same schottky barrier (double) diodes family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Very low forward voltage Very low reverse current Guard ring protected Very small SMD package. Absolute Maximum Ratings Ta = 25 Parameter Continuous reverse voltage Continuous forward current Repetitive peak forward current Non-repetitive peak forward current Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient Symbol VR IF IFRM IFSM Tstg Tj Tamb Rth j-a -65 tp 1 s; d 0.5 Conditions Min Max 40 200 300 1 -65 +150 150 +150 625 K/W Unit.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BAT854AW_GuangdongKexinIndustrial.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BAT854CW
Manufacturer Guangdong Kexin Industrial
File Size 64.68 KB
Description Schottky barrier (double) diodes
Datasheet download datasheet BAT854CW Datasheet

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Other Datasheets by Guangdong Kexin Industrial

Part Number Description
BAT854AW Schottky barrier (double) diodes
BAT854SW Schottky barrier (double) diodes
BAT854W Schottky barrier (double) diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type Schottky barrier (double) diodes BAT854W;BAT854AW BAT854CW;BAT854SW w w w . D a t a S h e Diodes Features Very low forward voltage Very low reverse current Guard ring protected Very small SMD package. Absolute Maximum Ratings Ta = 25 Parameter Continuous reverse voltage Continuous forward current Repetitive peak forward current Non-repetitive peak forward current Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient Symbol VR IF IFRM IFSM Tstg Tj Tamb Rth j-a -65 tp 1 s; d 0.5 Conditions Min Max 40 200 300 1 -65 +150 150 +150 625 K/W Unit V mA mA A t = 8.3 ms half sinewave;JEDEC method Electrical Characteristics Ta = 25 Parameter Symbol Conditions IF = 0.