KC808A Datasheet | Kexin Semiconductor

Features +0.1 2.9-0.1 +0.1 0.4-0.1 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current Base current Total power dissipation Storage temperature Junction temperature Symbol VCBO VCEO VEBO IC ICM IB Ptot Tstg Tj Rating -30 -25 -5 -500 -1 -100 310 -65 to +150 150 Unit V V V m A A m A m W Electrical Characteristics Ta = 25 Parameter Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Collector cutoff current Emitter cutoff current KC808A-16 DC current gain - Collector saturation voltage - Base to emitter voltage - Collector-base capacitance Emitter-base capacitance Transition frequency - Pulsed: PW 350 ìs, duty cycle 2% KC808A-25 KC808A-40 VCE(sat) IC = -500 m A, IB = -50 m A VBE(sat) IC = -500 m A, IB = -50 m A CCb Ceb f T VCB = -10 V, f = 1 MHz VEB = -0.5 V, f = 1 MHz IC = -50 m A, VCE = -5 V, f = 100 MHz 10 60 200 h FE IC = -100 m A, VCE = -1 V Symbol VCBO VCEO VEBO ICBO IEBO Testconditons IC = -10 µA, IE = 0 IC = -10 m A, IB = 0 IE = -10 µA, IC = 0 VCB = -25 V, IE = 0 VCB = -25 V, IE = 0 , TA = 150 VEB = -4 V, IC = 0 100 160 250 160 250 350 Min -30 -25 -5 -100 -50 -100 250 400 630 -0.7 -1.2 V V p F p F MHz Typ Max Unit V V V n A A n A Marking NO. Marking KC808A-16 5E KC808A-25 5F KC808A-40 5G +0.1 0.38-0.1 0-0.1 .kexin..cn...