KC807
KC807 is PNP Silicon AF Transistors manufactured by Kexin Semiconductor.
Features
For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage.
+0.1 1.3-0.1
+0.1 0.95-0.1 +0.1 1.9-0.1
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Rating -50 -45 -5 -800 310 150 -65 to +150 Unit V V V m A m W
Electrical Characteristics Ta = 25
Parameter Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain
- Collector saturation voltage
- Base emitter on voltage Output Capacitance Transition frequency
- Pulsed: PW 350 ìs, duty cycle 2% Symbol VCBO VCEO VEBO ICES IEBO h FE IC = -300 m A, VCE = -1 V VCE(sat) IC = -500 m A, IB = -50 m A VBE(on) VCE=-1V,IC=300m A Cob f T VCB=-10V,f=1MHz IC = -10 m A, VCE = -5 V, f = 50 MHz 100 60 -0.7 -1.2 12 V V p F MHz IC = -10 Testconditons A,VBE = 0 Min -50 -45 -5 -100 -100 100 630 Typ Max Unit V V V n A n A
IC = -10 m A, IB = 0 IE = -10 A, IC = 0
VCB = -25 V, VBE= 0 VEB = -4 V, IC = 0 IC = -100 m A, VCE = -1 V
Marking
NO. Marking h FE KC807-16 9FA 100 250 KC807-25 9FB 160 400 KC807-40 9FC 250 630
+0.1 0.38-0.1
0-0.1
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