KC807A Datasheet | Kexin Semiconductor

Features For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. +0.1 1.3-0.1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current Base current power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICM IB PD Tj Tstg Rating -50 -45 -5 -500 -1 -100 310 150 -65 to +150 Unit V V V m A A m A m W Electrical Characteristics Ta = 25 Parameter Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Collector cutoff current Emitter cutoff current KC807A-16 DC current gain - Collector saturation voltage - Base to emitter voltage - Collector-base capacitance Emitter-base capacitance Transition frequency - Pulsed: PW 350 ìs, duty cycle 2% KC807A-25 KC807A-40 VCE(sat) IC = -500 m A, IB = -50 m A VBE(sat) IC = -500 m A, IB = -50 m A CCb Ceb f T VCB = -10 V, f = 1 MHz VEB = -0.5 V, f = 1 MHz IC = -50 m A, VCE = -5 V, f = 100 MHz 10 60 200 h FE IC = -100 m A, VCE = -1 V Symbol VCBO VCEO VEBO ICBO IEBO IC = -10 Testconditons A, IE = 0 Min -50 -45 -5 -100 -50 -100 100 160 250 160 250 350 250 400 630 -0.7 -1.2 V V p F p F MHz Typ Max Unit V V V n A A n A IC = -10 m A, IB = 0 IE = -10 A, IC = 0 VCB = -25 V, IE = 0 VCB = -25 V, IE = 0 , TA = 150 VEB = -4 V, IC = 0 Marking NO. Marking KC807A-16 5A KC807A-25 5B KC807A-40 5C +0.1 0.38-0.1 0-0.1 .kexin..cn...