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KSP92 - P-channel enhancement mode vertical D-MOS transistor

Datasheet Summary

Features

  • Low threshold voltage VGS(th) Direct interface to C-MOS, TTL,etc. High-speed switching No secondary breakdown. www. DataSheet4U. com 1 6.50 +0.2 -0.2 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 2 2.9 4.6 3 +0.1 0.70-0.1 1 gate 2,4 drain 3 source Absolute Maximum Ratings Ta = 25 Parameter drain-source voltage gate-source voltage (open drain) DC drain current peak drain current total power dissipation (up to Tamb = 25.
  • ) storage temperature range junction temperature from junction to am.

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Datasheet Details

Part number KSP92
Manufacturer Guangdong Kexin Industrial
File Size 68.04 KB
Description P-channel enhancement mode vertical D-MOS transistor
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    SMD Type P-channel enhancement mode vertical D-MOS transistor KSP92 SOT-223 Transistors IC Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 Features Low threshold voltage VGS(th) Direct interface to C-MOS, TTL,etc. High-speed switching No secondary breakdown. www.DataSheet4U.com 1 6.50 +0.2 -0.2 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 2 2.9 4.6 3 +0.1 0.70-0.1 1 gate 2,4 drain 3 source Absolute Maximum Ratings Ta = 25 Parameter drain-source voltage gate-source voltage (open drain) DC drain current peak drain current total power dissipation (up to Tamb = 25 *) storage temperature range junction temperature from junction to ambient* Symbol -VDS VGSO -ID -IDM Ptot Tstg Tj Rth j-a Rating 240 20 180 720 1.5 -65 to 150 150 83.
    Published: |