BSS84KR
FEATURES z Low On-Resistance。 z Low Gate Threshold Voltage. z Low Input Capacitance. z Fast Switching Speed. z Available in Lead Free Version.
Pb
Lead-free
APPLICATIONS z P-channel enhancement mode effect transistor.
ORDERING INFORMATION
Type No.
Marking
%66.5
K84
SOT-323
Package Code SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
VDSS
Drain-Source voltage
-50 V
VDGR
Drain-Gate voltage
-50 V
VGSS
Gate -Source voltage continuous ±20
Drain current (Note1) continuous -130 m A
PD Power Dissipation (Note1)
200 m W
RθJA Thermal resistance,Junction-to-Ambient 625
℃/W
TJ, Tstg
Junction and Storage Temperature
-55 to +150
℃
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on GALAXY Inc. suggested pad layoutdocument AP02001.
%66.5
P-Channel Enhancement Mode Field Effect Transistor
ELECTRICAL...
