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BSS84KR - P-Channel Enhancement Mode Power MOSFET

Key Features

  • z Low On-Resistance。 z Low Gate Threshold Voltage. z Low Input Capacitance. z Fast Switching Speed. z Available in Lead Free Version. Pb Lead-free.

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%66.5 P-Channel Enhancement Mode Field Effect Transistor FEATURES z Low On-Resistance。 z Low Gate Threshold Voltage. z Low Input Capacitance. z Fast Switching Speed. z Available in Lead Free Version. Pb Lead-free APPLICATIONS z P-channel enhancement mode effect transistor. ORDERING INFORMATION Type No. Marking %66.5 K84 SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source voltage -50 V VDGR Drain-Gate voltage -50 V VGSS Gate -Source voltage continuous ±20 V ID Drain current (Note1) continuous -130 mA PD Power Dissipation (Note1) 200 mW RθJA Thermal resistance,Junction-to-Ambient 625 ℃/W TJ, Tstg Junction and Storage Temperature -55 to +150 ℃ Note: 1.