HM100N03D - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

General Description

The HM100N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =30V,ID =100A RDS(ON).

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HM100N03D n-channel enhancement mode power mosfet by H&M Semiconductor - Datasheet Preview

Datasheet Details

Part number	HM100N03D
Manufacturer	H&M Semiconductor
File Size	334.39 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM100N03D Datasheet

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Description The HM100N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =100A RDS(ON) <2.5 mΩ @ VGS=10V RDS(ON) <3.5mΩ @ VGS=4.