HM100N03GA Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HM100N03GA N-Channel Enhancement Mode Power MOSFET.

Datasheet Details

Part number	HM100N03GA
Manufacturer	H&M Semiconductor
File Size	794.03 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM100N03GA-HMSemiconductor.pdf

The HM100N03GA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

General

VDS =30V,ID =100A RDS(ON) = 3.6mΩ (typical) @ VGS= 10V RDS(ON) = 5.2mΩ (typical) @ VGS= 4.5V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.

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