HM10SDN10D - 100V Half Bridge Dual N-Channel Super Trench Power MOSFET

H&M Semiconductor

General Description

switching performance.

RDS(ON) and Qg.

Key Features

Q1 "High Side" MOSFET Q2 "Low Side" MOSFET.
VDS =0V,ID = 0A VDS =0V,ID =10A RDS(ON).

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HM10SDN10D 100v half bridge dual n-channel super trench power mosfet by H&M Semiconductor - Datasheet Preview

Datasheet Details

Part number	HM10SDN10D
Manufacturer	H&M Semiconductor
File Size	819.61 KB
Description	100V Half Bridge Dual N-Channel Super Trench Power MOSFET
Datasheet	HM10SDN10D Datasheet

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Full PDF Text Transcription (Reference)

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HM10SDN10D 0V Half Bridge Dual N-Channel Super Trench Power MOSFET Description The HM10SDN10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. It includes two specialized MOSFETs in a dual Power DFN5x6 package. General Features Q1 "High Side" MOSFET Q2 "Low Side" MOSFET ● VDS =0V,ID = 0A VDS =0V,ID =10A RDS(ON) <mΩ @ VGS=10V RDS(ON) <1mΩ @ VGS=10V RDS(ON)<mΩ @ VGS=4.5V RDS(ON) <mΩ @ VGS=4.