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HM15N50 Datasheet 500v N-channel MOSFET

Manufacturer: H&M Semiconductor

Overview: HM15N50/HM15N50F HM15N50/HM15N50F 500V N-Channel MOSFET General.

General Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br idge topology.

Key Features

  • 15.0A, 500V, RDS(on) = 0.42Ω @VGS = 10 V.
  • Low gate charge ( typical 45nC).
  • Fast s witching.
  • 100% avalanche tested.
  • Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
  • ◀▲ {G.
  • {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS.

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