Description
This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.
This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.
Features
- 15.0A, 500V, RDS(on) = 0.42Ω @VGS = 10 V.
- Low gate charge ( typical 45nC).
- Fast s witching.
- 100% avalanche tested.
- Improved dv/dt capability
{D
GDS
TO-220
GD S
TO-220F.
- ◀▲
{G.
- {S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS.
HM15N50F Datasheet
